Abstract
This paper reports on the analysis of MBE grown bilayer quantum dot (QD) laser material. Specifically, gain and absorption characteristics of 5x 'single' QD layers with InGaAs caps, 5x 'bilayer' QDs with GaAs caps and 5x 'bilayer' QDs with InGaAs cap layers are compared. For an In0.18Ga0.82As capped bilayer sample at room temperature, net modal gain is demonstrated beyond 1500 nm.
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