Abstract

Owing to the development of near-infrared phosphor-converted light-emitting diodes (NIR pc-LED), researchers have paid lots of attention to investigating broad-band NIR phosphors. A broadband NIR phosphor of chromium (III)-doped Sr2InSbO6 (SISO: Cr3+) was comprehensively introduced in terms of X-ray diffractometer (XRD), Rietveld refinement, and X-ray photoelectron spectroscopy (XPS), electronic structure, diffuse reflection, crystal field strength, photoluminescence performances and so on. Additionally, Cr3+ was successfully incorporated into the SISO lattice by substituting the In3+ site while the critical concentration was determined to be 3 mol%. The LED device was fabricated to better identify its practical application in the field of NIR solid-state lighting. On the other hand, the decay curves were recorded in the range of 10–460 K, which is used to analyze the luminescence lifetime sensing behaviors based on the Struck and Fonger models. Especially, the favorable relative sensitivity reached 0.73% K−1 at 280 K, which is rarely affected by the doping concentration. Briefly, this work synthesized a late-model luminescent material for potential NIR low-temperature measurement and NIR night vision technology.

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