Abstract
The primary causes of photogenerated carrier recombination in BiVO4 photoanodes are the formation of bulk polarons and sluggish water oxidation kinetics. To address these issues effectively, we designed a bifunctional Co-TiO2 to modify the BiVO4 photoanodes. UV–vis DRS and Mott-Schottky results indicate that Co adjusts the band gap of TiO2, and there forms a type-II heterojunction between BiVO4 and Co-TiO2. The experimental tests and theoretical calculations for OER as well as EIS results demonstrate that Co sites in Co-TiO2 provide more reaction sites for the interfacial oxidation reaction, reducing the overpotential. Under the dual action of Co-TiO2, the co-promotion for the migration ability of photogenerated carriers in the bulk and on the surface of BiVO4 photoanode has been realized. This conclusion is supported by analysis of photogenerated charge transfer behavior through transient photocurrent and IMPS. As a result, the photogenerated current density of BiVO4/Co7 %-TiO2 photoanode reaches 4.38 mA cm−2 at 1.23 V vs. RHE under AM 1.5 G illumination, which is four times that of pure BiVO4 photoanodes.
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