Abstract
AbstractThe effective mass approximation for biexciton states is extended to semiconductors with indirect gap. An equation similar to that valid for direct‐gap semiconductors is obtained for the envelope function. The electron‐hole exchange contribution is formally the same as that for the direct‐gap case. Intervalley interaction lifts the degeneracy of the biexciton ground state. The procedure is applied to the case of GaSe and AgBr, where the ground state multiplet of the biexcitons is related to the band structures.
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