Abstract
Direct creation of biexciton states by two-photon absorption in quantum well struture semiconductors is investigated theoretically. The two-photon transition rate to biexciton as a final state is analytically calculated for both polarization configurations. The biexciton matrix element has been estimated adopting a more accurate variational parameters wave function. A numerical application for GaAs Quantum Well (QW) shows that the biexciton two-photon absorption coefficient, α( 2) ( biex) for both polarizations is enhanced over the exciton two-photon absorption coefficient, α( 2) ( ex), by an order of magnitude. This enhancement is, essentially, found to arise from a resonance effect and the structure of the matrix elements involved in the two processes. Furthermore, α( 2)( biex), in a GaAs QW is four order of magnitude larger than α( 2)( biex) in bulk GaAs. This large increase is due to the spatial confinement of the carriers in the QW.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
