Abstract
AbstractA theory of free carrier absorption in quantum wells when electrons are scattered by confined LO phonons described by the Huang and Zhu model, Fuchs‐Kliewer slab modes, and Ridley's guided mode models is given. The effect of interface phonon modes on free carrier absorption is also studied. Numerical results for frequency and well width dependence are given for parameters characteristic of the GaAs/AlAs quantum well. A comparison is made with the calculations based on a bulk description of phonons.
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