Abstract
A new BiCMOS variable gain transimpedance amplifier with a large area integrated photodiode for automotive applications is presented. Through careful control of the input pole position and the frequency response of the core amplifier, the bandwidth of the transimpedance amplifier varies from 112 to 300 MHz when its gain changes from 14.2 kOmega to 400 Omega. The proposed circuit configuration maintains a high voltage across a common anode photodiode, and its bandwidth in highest gain varies from 121 to 102 MHz over a temperature range of -40 to +140degC. Simulation results in a 0.6 mum Si BiCMOS technology are given. The amplifier consumes 16 mW from a 3.3 V supply.
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