Abstract
In this work we study unstrained and biaxially strained triple-gate SOI nMOSFETs by process and device numerical simulations and by electrical characterization. Emphasis is given to the total resistance and transconductance in devices with and without SEG (selective epitaxial growth) and variable fin dimensions. The influence of the fin dimensions on the stress effectiveness is analyzed through 3D process simulations, while the total resistance and transconductance are analyzed through dc measurements. The use of biaxial stress combined with the SEG technique resulted in an lower total resistance and a higher maximum transconductance.
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