Abstract
The experimental and modeling study of bias-stress-induced threshold voltage instabilities in amorphous indium-gallium-zinc oxide thin film transistors is reported. Positive stress results in a positive shift in the threshold voltage, while the transfer curve hardly moves when negative stress is induced. The time evolution of threshold voltage is described by the stretched-exponential equation, and the shift is attributed to the electron injection from the channel into interface/dielectric traps. The stress amplitudes and stress temperatures are considered as important factors in threshold voltage instabilities, and the stretched-exponential equation is well fitted in various bias temperature stress conditions.
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