Bias Selectable Dual Band Detectors Based on Vertically Aligned In2S3‐coated ZnO Nanorod Arrays Grown on p‐GaN

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Herein, we report vertically aligned In2S3 coated ZnO nanotube arrays deposited on p‐GaN substrate by wet chemical method. The fabricated device based on In2S3/ZnO/p‐GaN heterostucture structure displays an enhanced photoresponse with self‐driven operation. The device based on ZnO/p‐GaN structure coupling with In2S3 nanoparticles exhibits bias selectable photodetection by detecting UV and UV/visible light through bias voltage modulation. This strategy can benefit to fabricate broadband photodetector based on ZnO/GaN structure.