Bias-dependent small-signal modeling of GaAs PIN diodes

Abstract

A new bias-dependent small-signal GaAs PIN diode model is described that is suitable for use in design of circuits like variable attenuators and limiters. The equivalent circuit parameters are extracted from bias-dependent S-parameters measured from 1 to 26 GHz for 35 bias currents. Bias-dependent equations are then curve fitted, and then incorporated into a commercially available computer-aided design (CAD) simulator. Measured and modeled data track each other very well over a range of bias conditions. © 2001 John Wiley & Sons, Inc. Int J RF and Microwave CAE 11: 99–106, 2001.