Bias-dependent small-signal modeling based on neuro-space mapping for MOSFET

Abstract

In this article, bias-dependent small-signal modeling approach based on neuro-space mapping is proposed for MOSFET. Good agreement is obtained between the simulated and measured results for a 130 nm MOSFET in the frequency range of 100 MHz–40 GHz confirming the validity and effectiveness of our approach. In addition, higher accuracy is achieved by our approach in contrast to conventional empirical model. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2011. © 2011 Wiley Periodicals, Inc.