Abstract
The aim of this paper is introducing the drain-current dependence into previously developed model [1] with two correlated noise sources and three corresponding equivalent temperatures. For this purpose we should know noise parameter values of a reference transistor (Tr) at two bias points (Ids1 and Ids2), and equivalent circuits elements values of all transistors Ti. Using this method, the noise parameters (Fmin, Γopt, Rn) for transistors Ti biased at any other current Ids3 can be obtained.
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