Abstract

A procedure for extraction of equivalent noise temperatures of microwave FETs using artificial neural networks is presented in this paper. The Pospieszalski's noise model is considered. A neural network is trained to predict equivalent drain temperature for given equivalent intrinsic circuit elements, intrinsic circuit noise parameters, ambient temperature and frequency. The suggested procedure enables avoiding optimization procedures in microwave circuit simulators. The proposed approach is validated by comparison of the noise parameters calculated by using the extracted drain temperature with the reference ones obtained by Pospieszalski's approach.

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