Abstract
Orientationally ordered epitaxial thin films of Bi have been grown on GaAs(110) and InP(110) at deposition temperatures of 30 K. These semimetal films grow in triple layers with pseudocubic {110} planes parallel to the substrate. Growth at 30 K produced metastable flat films whereas deposition at 300 K produced more three-dimensional films. This demonstrates that the growth mode can be selected by changing the growth temperature. The pseudocubic [100] directions of the Bi overlayers on GaAs(110) and InP(110) were rotated by ±10° and ±7° from the substrate [11̄0] directions. The surface of these metastable overlayers contains superstructures which are modeled as a Moiré effect between the overlayer and substrate lattice.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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