Abstract
Bi-surface photoconductivity decay (BSPCD) method has been developed to investigate minority-carrier recombination lifetime property in silicon wafers with variously finished surfaces. The lifetime analysis for thermally oxidized n-type Czochralski (CZ) silicon wafers with and without a polysilicon back seal (PBS) was carried out with the BSPCD method using 500 MHz-UHF wave reflection. The surface recombination velocity of the PBS surface has been first obtained to be ∼4000 cm/s. Moreover, the BSPCD study has revealed the existence of the thermal process induced contamination contributing to the bulk lifetime degradation and the PBS gettering performance for the contamination.
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