Abstract

We have investigated the effect of Bi on the homoepitaxial growth of Fe(100) by means of reflection high-energy electron diffraction (RHEED). It was clearly found that Bi induces layer-by-layer growth of Fe on Fe(100)-c(2×2)O reconstruction surface. The result of the dependence of the growth behavior as a function of Bi layer thickness suggests that there exist optimum amount of Bi surfactant layer that induces smoother layer-by-layer growth. The surface segregation effect of Bi was studied by Auger electron spectroscopy. A strong surface segregation of Bi was found at the top of surface and Bi atoms acted as a surfactant by promoting the interlayer transport.

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