Abstract
The giant tunnelling electroresistance (TER) and memristive behaviours of ferroelectric tunnel junctions make them promising candidates for future information storage technology. Using conducting ferromagnetic layers as electrodes results in multiferroic tunnel junctions (MFTJs) which show spin dependent transport. The tunnelling magnetoresistance (TMR) of such structures can be reversibly controlled by electric pulsing owing to ferroelectric polarisation-dependent spin polarisation at the ferroelectric/ferromagnetic interface. Here, we show multilevel electric control of both TMR and TER of MFTJs, which indicates the bi-ferroic or magneto-electric memristive properties. This effect is realised by manipulating the ferroelectric domain configuration via non-volatile partial ferroelectric switching obtained by applying low voltage pulses to the junction. Through electrically modulating the ratio between up- and down-polarised ferroelectric domains, a broad range of TMR (between ∼3% and ∼30%) and TER (∼1000%) values can be achieved. The multilevel control of TMR and TER using the electric pulse tunable ferroelectric domain configuration suggests a viable way to obtain multiple state memory.
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