Abstract
AbstractThe pursuit of breakthroughs in thin film technology drives the exploration of novel growth strategies for quantum materials that surpass conventional limitations. Departing from the prevailing unidirectional growth approach, the methodology allows for atomic precision in both the in‐plane and out‐of‐plane directions. To demonstrate the capabilities of this transformative technique, a bi‐directionally grown superlattice comprised of alternating LaMnO3 and SrMnO3 layers is engineered, enabling the emergence of interfacial ferromagnetism. By adopting this superlattice as a model system, the vast potential of the approach is highlighted through comprehensive analysis and characterization. Furthermore, the application of the method is extended to the growth of superconducting La1.84Sr0.16CuO4 thin films on various offcut substrates. Remarkably, these substrates induce an anisotropic critical current originating from two distinct mechanisms.
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