Abstract
In this work, we present the preparation of CdS nanowires (CdS-NWs) using the chemical vapor deposition technique and Bi nanoparticles as catalysts. The obtained nanowires were found to be in the hexagonal Greenockite structure according XRD diffractograms and Raman spectroscopy measurements. In dependence of the growth temperature, two kinds of morphologies were observed in SEM images. At low temperature, a high density and homogenous population of thin and straight nanowires grown through the Vapor-Liquid-Solid mechanism was observed. At higher temperature, thicker bunches of braided nanowires were observed. A quantitative analysis of the temperature-dependent photoluminescence spectra of the CdS-NWs was carried out.
Highlights
Semiconductor nanowires have been the subject of intense research because of their novel properties and potential to be incorporated in advanced devices
The nanowires are single crystals as can be observed in the corresponding Fast Fourier Transform in the right inset in Figure 4, which can be indexed as the [001] zone axis; the nanowires grow with the [001] direction normal to the axis of the nanowires
The CdS nanowires (CdS NWs) were prepared using the catalytic method with Bi nanoparticles
Summary
Semiconductor nanowires have been the subject of intense research because of their novel properties and potential to be incorporated in advanced devices. Chemical vapor deposition (CVD) technique, assisted or not by metal catalysts (nanoparticles or very thin layers) is frequently used for preparing CdS NWs (Wang et al, 2002a; Ge and Li, 2004; Kwak et al, 2009). They are obtained by transport of the vapor species to the substrates covered with the catalyst. No significant differences were found in the spectra that were taken with the two configurations
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