Abstract
We investigate a novel grown-MOCVD BGaAs/InGaAs/BGaAs/GaAs heterostructure for the first time using High-Resolution X-Ray Diffraction (HR-XRD), steady state photoluminescence (PL) and time-resolved photoluminescence (TRPL). The strain effects in the InGaAs/GaAs quantum well is compensated due to the additional BGaAs buffer/barrier layer (%B = 7.8%). PL measurements show an extended emission around 1 eV and two emission bands associated with the InGaAs and BGaAs layers and these bands are analyzed theoretically with the help of 10 band k‧p Hamiltonian. Red shifts of about 0.15 eV (InGaAs) and 0.29 eV (BGaAs) are observed, encouraging dual applications in high wavelengths and solar cells. A reduction of the abnormal behavior due to potential fluctuations and carrier localization is quantitatively and qualitatively investigated using the Localized States Exciton model (LSE) model. Our structure appears to be a promising candidate for future-generation ultra high-efficiency three- and four-junction multijunction solar cell devices as well as its applications in the telecommunication wavelength range.
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