Abstract
The B diffusion dependence on the preimplantation energy and dose of Ge + or Si + was studied. Boron-enhanced diffusion is reduced by moderate lattice disorder below amorphization. The residual damage was examined by cross-sectional transmission electron microscopy, which indicated that amorphization causes the formation of extended defects. A gate-controlled diode was designed and fabricated for the evaluation of preimplanted layer. The dependence of the leakage current on the preimplantation dose indicates that no serious defects are caused by Ge + implantation at 40 keV and 5 × 10 13 cm −2 or Si + at 40 keV and 2 × 10 14 cm −2.
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