Abstract
In this paper, the authors reported recent work on the growth and fabrication of InGaAs/GaAsSb type II superlattice detectors by solid source molecular beam epitaxy. Superlattice materials with different Beryllium (Be) doping concentration were grown and characterized by high resolution X-ray diffraction, Hall Effect technique, and photoluminescence. The results showed that doping concentration of the superlattice was sensitive to the Be temperature. A p-π-n InGaAs/GaAsSb T2SL photodiode was grown on an InP substrate. The full width at half maximum of the first order satellite peak from X-ray diffraction was 36 arcsec. The photodiode with 7nm InGaAs and 5nm GaAsSb in each period showed a 50% cutoff wavelength of 2.35μm at 293K. The dark current density at −50mV bias was 0.54mA/cm2 and the resistance-area product at zero bias (R0A) was 46Ω⋅cm2. The peak detectivity was 4.4×1010cmHz1/2/W. The quantum efficiency at 2.1μm was measured to be 48.2%.
Published Version
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