Abstract
We report the effect of repeated tensile bending on the performance of amorphous indium-gallium- zinc oxide (a-IGZO) thin-film transistors (TFTs) on 15-μm polyimide substrate. Bending direction is vertical or parallel to the current path in a-IGZO TFT. With increasing bending time, the transfer curve shifts to the negative gate voltage direction. It is noted that the shift is smaller for longer channel length TFT. We performed technology computer aided design simulation for the TFT transfer curves and found that donorlike and acceptorlike states increase, respectively,by 2.5×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">17</sup> and 0.4×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">17</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> after 10k bending. The recovery of the transfer curve is studied by thermal annealing of the stressed TFT as a variation of annealing temperature and it is found that the performance can be completely recovered by thermal annealing at 300 °C for 1 h.
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