Behaviour of Oxygen-Implanted and Hydrogen-Implanted SiGe/SiHeterostructures

Abstract

For SiGe-on-insulator fabrication, a 100 nm SiGe film with uniform germaniumcomposition was grown on a Si(100) substrate using a molecular beam epitaxysystem without a graded SiGe buffer layer. The samples were implanted byoxygen ions at an energy of 45 keV and a dose of 3×1017 cm-2,and annealed for five hours at 1250oC in flowing (Ar + 5% O2)atmosphere with a100 nm oxide protective layer. The result indicates that a buried oxide layerwas successfully formed at the interface of SiGe and Si on the substrate.Furthermore, hydrogen was implanted into SiGe at the energy of 62 keV and thedose of 6×1016 cm-2 to perform a blistering study, which confirmedthe feasibility of H-induced layer splitting in SiGe layer.