Abstract
A 100 nm SiGe film with uniform Germanium composition was grown on Si[100] substrate using MBE system without graded SiGe buffer layer. Then the samples were implanted by oxygen ions at an energy of 45 keV and a dose of 3/spl times/10/sup 17//cm/sup 2/, and annealed for 5 hours at 1250/spl deg/C in flowing Ar atmosphere with 5% O/sub 2/ with a 100 nm oxide protective layer. After that the buried oxide layer was formed, and Ge redistribution was found. Also, Hydrogen was implanted into SiGe at the energy of 62 keV and the dose of 6/spl times/10/sup 16//cm/sup 2/ to perform a blistering study, which suggested the feasibility of H-induced layer splitting in SiGe layer.
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