Abstract
The temperature dependence of one of the prominent DLTS lines of plastically deformed n-type silicon indicates trapping of both electrons and holes. An algorithm for analysis of such cases is proposed which does not require exponential transients. In this way the position of the D trap in the gap and its capture cross sections for electrons and holes are redetermined. Its density in standard deformed crystals is considerably higher than assumed before. Beam injection DLTS reveals a pure electron trap with the same parameters Δ E and σ n as determined for the amphoteric trap in the first part. Trapping of holes under beam injection possibly is obscured by nearby shallow hole traps.
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