Abstract
Two-dimensional numerical simulations have been performed to define the sensitive volume and triggering criteria of single-event burnouts (SEBs) for standard and superjunction MOSFETs and planar and trench IGBTs for different configurations of ionizing tracks and for different conditions of polarization and temperature. The analysis of the results gives a better understanding of the SEB mechanism in each structure and a comparison of behavior and robustness of these technologies under heavy-ion irradiation.
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