Behavioral Model of the Superjunction Power MOSFET Devices

Abstract

In this paper, superjunction power metal–oxide–semiconductor field-effect transistor (MOSFET) model is presented. The proposed behavioral model is simple, accurate and uses a reduced number of parameters to describe accurately the static behavioral of the superjunction power MOSFET devices. Unlike the conventional power MOSFET model, this model uses only one standard MOSFET to describe the normal and the quasi-saturation operational regions of the power MOSFET. Consequently, this model gives fast simulation results without any problem of convergence. Using the simulated program with integrated circuit emphasis (SPICE) circuit simulator, simulation results show that the proposed model gives high correlations with the manufacturer datasheet and the measured data.