Abstract
The behavior of the by-product produced in an exhaust tube by the semiconductor silicon carbide epitaxial growth process was evaluated. The by-product layer was a dark-colored viscous liquid; it captured precursor gases and gaseous by-products, such as hydrogen, monosilane, propane, hydrogen chloride and chlorosilanes. These captured gases were spontaneously emitted in ambient nitrogen at room temperature. By an etching process using a chlorine trifluoride gas at low concentrations in ambient nitrogen, the by-product layer could be safely decomposed to gaseous fluorides of silicon and carbon. After finishing the etching, there remained a small amount of residue which included particles of carbon, silicon carbide and related compounds. Based on these results, the by-product layer formation process was discussed.
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