Abstract
The effect of the first-step heat treatment temperature on the bulk microdefect (BMD) and oxidation-induced stacking fault (OiSF) formation in two kinds of heavily boron-doped silicon wafers, with and without an OiSF ring area, were investigated by comparing it with that in lightly boron-doped wafers. The BMD density was observed to be higher in the heavily doped silicon than in the lightly doped one at the same oxygen concentration. Unlike in the lightly doron-doped silicon, in the heavily boron-doped silicon, OiSFs were formed over the entire wafer surface regardless of the OiSF ring position when the first-step heat treatment was carried out at 900°C.
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