Behavior of nitrogen atoms in SiC-SiO2 interfaces studied by electrically detected magnetic resonance

Abstract

The microscopic behavior of nitrogen atoms in the SiO2-SiC interface regions of n-channel lateral 4 H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs) was studied using low-temperature electrically detected magnetic resonance spectroscopy and other techniques. The results show that nitrogen atoms eliminated shallow interface states observable at 20 K and further diffused into the channel region of the MOSFETs as shallow donors. These two behaviors enable nitrogen atoms to change the channel conductivity of SiC MOSFETs.