Abstract
Monte Carlo simulations have been performed for 855 MeV and 6.3 GeV electrons channeling in silicon single crystals at circular bent (111) planes. The aim was to identify critical experimental parameters which affect the volume-deflection and volume-capture characteristics. To these belongs the angular alignment of the crystal with respect to the nominal beam direction. The continuum potential picture has been utilized. The simulation results were compared with experiments. It turns out that the assumption of an anticlastic bending of the crystal, bent on the principle of the quasi-mosaic effect, is not required to reproduce the gross features of the experimental observations for two examined examples.Graphical abstract
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
