Abstract
Be + ion implantation into Te-doped Ga(Al)Sb ( x Al ≈ 4% ) epilayers was performed to realize the p + layer of a p +/n − GaAlSb/GaSb n + IR avalanche photodetector. A double implantation using 100+50 keV energies and fluences around 10 13 cm −2 is found to be a convenient procedure to produce a junction depth of 0.5 μm. Damage levels created by Be + ions in GaAlSb layers are simulated and investigated through channelling measurements and it is seen that heat treatments (15 min, 450 °C, H 2) improve the activation. This paper clearly shows that Be + ion implantation leads to a low damage level in this III–V compound.
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