Abstract
Implantation of Be+ ions into GaAISb epilayers is used to realize thep + layer of the Ga0.96Al0.04Sb p+/Ga0.96Al0.04Sbn − /GaSbn + (1.55 /Μm) avalanche photodetector whose performances are detailed in Ref. (1). The GaAISb layers are grown using liquid phase epitaxy (LPE); the quality of these as-grown layers is shown through photoluminescence and channeling measurements. The last part of this paper is devoted to the damaging level in the Be+-implanted layers. Some annealing techniques are presented as a mean of restoration of the implanted layers. It is clear from the results that the Be+ ion implantation leads to a low damage level in this III-V compound.
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