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Abstract
Results on Be diffusion during post-growth rapid thermal annealing at 750°C and 850°C in InGaAs, InGaAsP homostructures and InGaAs/InGaAsP heterostructures, grown by gas source molecular beam epitaxy, are reported. Profiles calculated with the kick-out model can be fitted to experimental secondary ion mass spectrometry profiles assuming Be to diffuse as neutral interstitial species.
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