Abstract
In this chapter, the basic simulation techniques for advanced MOS process development will be described. First of all, the basic device physics of MOSFET is presented The discussion will be in very simple terms, although sufficient to allow the process engineers to understand the basic characteristics of MOSFETs and their significance. The techniques of generating the device parameters are then presented. Also to be discussed are the short channel effects such as drain-induced barrier lowering. Simulations are used to reveal details of these phenomena. The relationship between process parameters and device characteristics are discussed. Simulated results are compared with experimental results. The discussions will emphasize the GEMINI program since it is relatively simple to use.
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