Abstract
Reduction of base–collector junction capacitance has been intended by He + ion implantation to enhance the maximum oscillation frequency of AlGaAs/GaAs heterojunction bipolar transistors (HBTs). From the recovery of the base resistance by rapid thermal annealing (RTA) after ion implantation, it is found that optimum conditions are 140 keV and 5×10 12–1×10 13 cm −2 for He + ion implantation and 400°C and 20 s for rapid thermal annealing.
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