Abstract
Accurate measurements of ohmic base resistance for bipolar junction transistors at low frequencies and for medium to low-bias conditions are somewhat difficult to obtain. Presented herein is a technique involving measurement of the input common-emitter h ie parameter at cryogenic temperatures (where the intrinsic input resistance parameter is quite small) using conventional low-frequency bridge techniques. Comparison of results obtained by this procedure are made with results obtained by the input impedance circle diagram method and the noise figure method.
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