Abstract
We report herein high-resolution X-ray diffraction measurements of basal plane bending of homoepitaxial single-crystal diamond (SCD). We define SCD (100) as the base plane. The results revealed that growth parameters such as temperature, growth time, and basal plane bending of the substrate all affect the basal plane bending of SCD. First, the basal plane bending of SCD depends mainly on the substrate and becomes severe with increasing basal plane bending of the substrate. The SCD growth experiments show that the basal plane bending increases with elevated growth temperature and increased growth time. Finally, to understand the mechanism, we investigated the substrate-surface temperature distribution as a function of basal plane bending of SCD fabricated by chemical vapor deposition (CVD). This allowed us to propose a model and understand the origin of basal plane bending. The results indicate that an uneven temperature distribution on the substrate surface is the main cause of the base-plane bending of CVD diamond.
Highlights
Single-crystal diamond (SCD) has a wide band gap, high thermal conductivity, high breakdown voltage, high carrier mobility, and strong resistance to radiation, which earns it the name “the ultimate semiconductor” [1,2,3,4,5,6]
H1 and M1, the basal plane bending was measured before microwave plasma chemical vapor deposition (MPCVD) growth and after growth
An effective method to alleviate basal plane bending is to use high-quality substrates with flatin the substrate is the dominant factor for determining the basal plane bending
Summary
Single-crystal diamond (SCD) has a wide band gap, high thermal conductivity, high breakdown voltage, high carrier mobility, and strong resistance to radiation, which earns it the name “the ultimate semiconductor” [1,2,3,4,5,6]. It can be used in deep ultraviolet detectors, particle detectors, high-power, high-voltage. Basal plane bending in SCDs degrades the crystal quality by inducing dislocations and even cracks [11,12,13,14]. No reports yet exist on basal plane bending in SCDs
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