Abstract
The photoelectric characteristics (independent of ferroelectric polarization) of metal-ferroelectric- metal thin film structures upon exposure to radiation in different ranges of mercury arc lamp spectrum are stud- ied for the Pb(Zr 0.5 2Ti 0.48 )O 3 ( PZT ) ferroelectrics. The PZT films on platinized silicon substrates were prepared by the sol-gel technique. The relaxations of the short-circuit current and the open-circuit voltage are investi- gated at different intensities of light with wavelengths in the range 300-1200 nm. It is found that the open-cir- cuit voltage returns to its original value after the cessation of light exposure and a short-term holding of struc- tures in the short-circuited state. The factors responsible for the photocurrent and the photoemf are analyzed, and the conclusion is made that they are predominantly contributed by the barrier photovoltaic effects associ- ated with the presence of the p - n junction in the bulk of films and the Schottky barrier in the film region adjacent to the lower platinum electrode. © 2000 MAIK "Nauka/Interperiodica".
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