Abstract
Metals and their silicides form with n-silicon potential barriers in the 0.5–0.85 eV energy interval. The results of this work determine the barrier height as a very important parameter in the design of high power Schottky diodes. Using the basic relation of one Schottky junction the thermal losses in the junction are optimised and the thermodynamic equilibrium conditions are determined as a function of the barrier height. The analysis concentrates on Schottky junctions that silicon forms with electron-beam-deposited thin films of Cr, Mo, Pd and Pt. The formation of Schottky junctions and the effect of some technological parameters such as substrate temperature during film deposition, Ar ion precleaning of the substrate and thermal annealing of the deposited films are also discussed.
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