Abstract
The interfacial layer theory considering the effects of the interface states and surface fixed charges is developed for the barrier height of the Schottky barrier diode with a thin uniformly doped surface layer. It is shown that the origins of the barrier height modification using the highly doped surface layer are mainly due to the increase of the electric field at the contact surface and the change of the interface properties. Design criterion for the maximum width of the highly doped surface layer is derived and calculated in detail for nickel barrier metal on n-type silicon with the specificed interfacial layer conditions. Comparisons between the the developed expression of the barrier height reduction with respect to the ion dose and the experimental data of Shannon et al. are made, which tend to support the proposed model.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
