Abstract
The spatial fluctuation in barrier heights of a planar-doped barrier due to the discreteness of the acceptors and their statistical distribution has been calculated by solving Poisson’s equation in three dimensions. Our model assumes a random distribution of spherical acceptor charges. Nonlinear Thomas–Fermi screening has been used to include the effect of free carriers and to determine their position-dependent concentration. At 4.2 K we find a range in barrier heights of 30 meV for a barrier with an average value of 0.206 eV. The method by which potential fluctuations broaden the energy distribution of ballistic electrons is illustrated by an example.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
