Abstract
The photoconductivity (PC) of GaAs:Ge under hydrostatic pressure shows another giant PC caused by a neutral, localized donor state with ${\mathit{A}}_{1}$ symmetry in addition to the well-known persistent PC due to the DX state. We find that the top of the barrier for electron recapture to the ${\mathit{A}}_{1}$ state is pinned to the conduction-band edge and that the capture cross section \ensuremath{\sigma}(T\ensuremath{\rightarrow}\ensuremath{\infty}) is surprisingly small. In agreement with recent theoretical calculations, the observed shallow-deep donor instability is attributed to the change of the short-range part of the donor potential due to interaction with acoustic phonons.
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