Abstract
We have studied the pressure and temperature dependences of Hall electron concentration and mobility in degenerated, not intentionally doped InN samples. The results obtained for a whole set of samples with electron concentrations from 5.4 x 10 17 cm -3 to 3.3 x 10 18 cm -3 consistently revealed the existence of a localized donor type state resonant with the conduction band. The concentration of this state is of the same order in all studied samples and not exceeds 10 18 cm -3 . Population of this state determines electrical properties of InN samples with low carrier concentration. This donor state is not the main source of conducting electrons in these not intentionally doped samples and can be entirely populated and hidden in samples with high electron concentration exceeding about 3 x 10 18 cm -3 .
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