Abstract
Doped oxide semiconductors, which are widely used as transparent heat-reflectors, have a wider energy gap than the undoped material. This bandgap widening was investigated in In 2O 3 and In 2O 3:Sn. Empirical data were extracted for coating with electron density ≲10 21 cm −3. They are interpreted within an effective-mass-model for n-doped semiconductors well above the Mott critical density. The impurities are ionized and the associated electrons occupy the bottom of the conduction band in the form of an electron gas. The model accounts for a Burstein-Moss shift as well as electron-electron and electron-impurity scattering treated in the random phase approximation. Experiments and theory were reconciled by assuming a parabolic valence band with an effective mass ∼0.6 m. Earlier work on doped oxide semiconductors is assessed and criticized in the light of the present results.
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