Abstract
Ion induced QW intermixing using broad area and focused ion beam (FIB) implantation was investigated at low energy (32 and 100 keV respectively) in three different material systems (GaAs/AlGaAs, InGaAs/GaAs, and lattice matched InGaAs/InP). Repeated sequential ion implants and rapid thermal anneals (RTAs) were successful in delivering several times the maximum QW bandgap shift achievable by a single implant/RTA cycle. The effectiveness of broad area high energy implantation (8 MeV As4+) on QW intermixing was also established for GRINSCH (graded-index separate confinement heterostructure) QW laser structures grown in InGaAs/GaAs. Lastly, preliminary work illustrating the effects of implant temperature and ion current density was carried out for InGaAs/GaAsQWs.
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