Bandgap renormalization at finite carrier densities in semiconductor quantum wells and mesa structures

Abstract

Theoretical and experimental results for the band gap renormalizations in lattice matched In 53Ga 47As/InP quantum wells are given and compared. The theoretical results involve fully self-consistent calculations of the subband energies using a generalization] of the local density approximation for two component electron-hole systems. The experimental results are obtained from photoluminescence studies at high excitation of quantum wells in mesa structures. The band gap renormalization is found to depend on the indices of the subbands involved, which results from the symmetries of the subband wavefunctions.