Abstract
Bandgap narrowing affects semiconductor device operation. Solar cells are pn junction devices for which the energy bandgap is a very important parameter. The aim of this paper is to investigate how bandgap narrowing can influence the open circuit voltage of silicon, gallium arsenide and indium phosphide solar cells. The increase in the base doping concentration for improving device operation is limited by bandgap narrowing effects. A quantitative study of the open circuit variation with base doping concentration and ideality factor is presented and the critical values for these parameters are determined for these materials.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
